Technical Specifications of 2N4261UB
| Datasheet |  2N4261UB datasheet |
|---|
| Category | Discrete Semiconductor Products |
|---|
| Family | Transistors - Bipolar (BJT) - Single |
|---|
| Manufacturer | Microsemi IRE Division |
|---|
| Series | - |
|---|
| Packaging | Bulk |
|---|
| Transistor Type | PNP |
|---|
| Current - Collector (Ic) (Max) | 30mA |
|---|
| Voltage - Collector Emitter Breakdown (Max) | 15V |
|---|
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 1mA, 10mA |
|---|
| Current - Collector Cutoff (Max) | 10μA (ICBO) |
|---|
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 1V |
|---|
| Power - Max | 200mW |
|---|
| Frequency - Transition | - |
|---|
| Mounting Type | Surface Mount |
|---|
| Package / Case | 3-SMD, No Lead |
|---|
| Supplier Device Package | UB |
|---|
We can supply Microsemi IRE Division part# 2N4261UB. Use the request quote form to request 2N4261UB pirce and lead time. RANTLE EAST ELECTRONIC - ICRFQ.com is an independent stocking distributor of electronic components. With 5+ Million line items of available electronic components can ship in short lead-time, over 300 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 2N4261UB. The price and lead time for 2N4261UB depending on the quantity required, availability and warehouse location. Contact us today and our sales representative will provide you price and delivery on Part# 2N4261UB. We look forward to doing business with you.
Start With
Include With
