Technical Specifications of MJD2955-1G
Datasheet | MJD2955-1G datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - Single |
Manufacturer | ON Semiconductor |
Series | - |
Packaging | Tube |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 10A |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 8V @ 3.3A, 10A |
Current - Collector Cutoff (Max) | 50μA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 4V |
Power - Max | 1.75W |
Frequency - Transition | 2MHz |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package | I-Pak |
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