Technical Specifications of BD682TG
Datasheet | BD682TG datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - Single |
Manufacturer | ON Semiconductor |
Series | - |
Packaging | Tube |
Transistor Type | PNP - Darlington |
Current - Collector (Ic) (Max) | 4A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A |
Current - Collector Cutoff (Max) | 500μA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A, 3V |
Power - Max | 40W |
Frequency - Transition | - |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Supplier Device Package | TO-225AA |
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