Technical Specifications of SCT2H12NZGC11
| Datasheet |  SCT2H12NZGC11 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Rohm Semiconductor |
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| Series | - |
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| Packaging | Tube |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Silicon Carbide (SiC) |
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| Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
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| Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
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| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 1.1A, 18V |
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| Vgs(th) (Max) @ Id | 4V @ 900μA |
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| Gate Charge (Qg) @ Vgs | 14nC @ 18V |
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| Input Capacitance (Ciss) @ Vds | 184pF @ 800V |
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| Power - Max | 35W |
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| Operating Temperature | 175°C (TJ) |
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| Mounting Type | Through Hole |
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| Package / Case | TO-3PFM, SC-93-3 |
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| Supplier Device Package | TO-3PFM |
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