Technical Specifications of BCV64B,215
| Datasheet |  BCV64B,215 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | NXP Semiconductors |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | 2 PNP (Dual) |
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| Current - Collector (Ic) (Max) | 100mA |
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| Voltage - Collector Emitter Breakdown (Max) | 30V, 6V |
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| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA / 250mV @ 5mA, 100mA |
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| Current - Collector Cutoff (Max) | 15nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V / 220 @ 2mA, 700mV |
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| Power - Max | 250mW |
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| Frequency - Transition | 100MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-253-4, TO-253AA |
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| Supplier Device Package | SOT-143B |
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