Technical Specifications of VS-GT100TP60N
| Datasheet |  VS-GT100TP60N datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Modules |
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| Manufacturer | Vishay Semiconductor Diodes Division |
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| Series | - |
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| IGBT Type | Trench |
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| Configuration | Half Bridge |
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| Voltage - Collector Emitter Breakdown (Max) | 600V |
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| Current - Collector (Ic) (Max) | 160A |
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| Power - Max | 417W |
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| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 100A |
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| Current - Collector Cutoff (Max) | 5mA |
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| Input Capacitance (Cies) @ Vce | 7.71nF @ 30V |
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| Input | Standard |
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| NTC Thermistor | No |
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| Mounting Type | Chassis Mount |
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| Package / Case | INT-A-PAK (3 + 4) |
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| Supplier Device Package | INT-A-PAK |
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