Technical Specifications of JAN2N5416
| Datasheet |  JAN2N5416 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Microsemi IRE Division |
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| Series | Military, MIL-PRF-19500/485 |
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| Packaging | Bulk |
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| Transistor Type | PNP |
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| Current - Collector (Ic) (Max) | 1A |
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| Voltage - Collector Emitter Breakdown (Max) | 300V |
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| Vce Saturation (Max) @ Ib, Ic | 2V @ 5mA, 50mA |
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| Current - Collector Cutoff (Max) | 1mA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
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| Power - Max | 750mW |
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| Frequency - Transition | - |
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| Mounting Type | Through Hole |
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| Package / Case | TO-205AA, TO-5-3 Metal Can |
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| Supplier Device Package | TO-5 |
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