Technical Specifications of IPI041N12N3GAKSA1
| Datasheet |  IPI041N12N3GAKSA1 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Infineon Technologies |
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| Series | OptiMOS? |
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| Packaging | Tube |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 120V |
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| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
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| Rds On (Max) @ Id, Vgs | 4.1 mOhm @ 100A, 10V |
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| Vgs(th) (Max) @ Id | 4V @ 270μA |
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| Gate Charge (Qg) @ Vgs | 211nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 13800pF @ 60V |
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| Power - Max | 300W |
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| Operating Temperature | -55°C ~ 175°C (TJ) |
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| Mounting Type | Through Hole |
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| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
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| Supplier Device Package | PG-TO262-3 |
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