Technical Specifications of MPQ3798
| Datasheet |  MPQ3798 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | Central Semiconductor Corp |
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| Series | - |
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| Packaging | Tube |
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| Transistor Type | 4 PNP (Quad) |
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| Current - Collector (Ic) (Max) | 50mA |
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| Voltage - Collector Emitter Breakdown (Max) | 40V |
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| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100μA, 1mA |
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| Current - Collector Cutoff (Max) | 10nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 10mA, 5V |
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| Power - Max | 500mW |
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| Frequency - Transition | 60MHz |
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| Mounting Type | Through Hole |
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| Package / Case | 14-DIP (0.300", 7.62mm) |
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| Supplier Device Package | TO-116 |
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