Technical Specifications of BC857QASZ
Datasheet | BC857QASZ datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - Arrays |
Manufacturer | NXP Semiconductors |
Series | Automotive, AEC-Q101 |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 PNP (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 2mA, 5V |
Current - Collector Cutoff (Max) | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
Power - Max | 350mW |
Frequency - Transition | 100MHz |
Mounting Type | Surface Mount |
Package / Case | 6-XFDFN Exposed Pad |
Supplier Device Package | DFN1010B-6 |
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