Technical Specifications of BSS84P-E6327
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | SIPMOS? |
Packaging | Cut Tape (CT) |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
Rds On (Max) @ Id, Vgs | 8 Ohm @ 170mA, 10V |
Vgs(th) (Max) @ Id | 2V @ 20μA |
Gate Charge (Qg) @ Vgs | 1.5nC @ 10V |
Input Capacitance (Ciss) @ Vds | 19pF @ 25V |
Power - Max | 360mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | PG-SOT23-3 |
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