Technical Specifications of NSVT65010MW6T1G
| Datasheet |  NSVT65010MW6T1G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Cut Tape (CT) |
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| Transistor Type | 2 PNP (Dual) |
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| Current - Collector (Ic) (Max) | 100mA |
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| Voltage - Collector Emitter Breakdown (Max) | 65V |
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| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
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| Current - Collector Cutoff (Max) | 15nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
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| Power - Max | 380mW |
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| Frequency - Transition | 100MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | 6-TSSOP, SC-88, SOT-363 |
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| Supplier Device Package | SC-88 (SOT-363) |
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