Technical Specifications of STD815CP40
| Datasheet |  STD815CP40 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | STMicroelectronics |
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| Series | - |
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| Packaging | Tube |
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| Transistor Type | NPN, PNP |
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| Current - Collector (Ic) (Max) | 1.5A |
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| Voltage - Collector Emitter Breakdown (Max) | 400V |
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| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 350mA |
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| Current - Collector Cutoff (Max) | 1mA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 16 @ 350mA, 5V |
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| Power - Max | 2.6W |
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| Frequency - Transition | - |
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| Mounting Type | Through Hole |
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| Package / Case | 8-DIP (0.300", 7.62mm) |
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| Supplier Device Package | 8-DIP |
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