Technical Specifications of ZXTN2010A
| Datasheet |  ZXTN2010A datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Diodes Incorporated |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 4.5A |
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| Voltage - Collector Emitter Breakdown (Max) | 60V |
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| Vce Saturation (Max) @ Ib, Ic | 210mV @ 200mA, 5A |
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| Current - Collector Cutoff (Max) | 50nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 1V |
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| Power - Max | 1W |
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| Frequency - Transition | 130MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-226-3, TO-92-3 Short Body (Formed Leads) |
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| Supplier Device Package | TO-92-3 |
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