Technical Specifications of VS-GB100TP120N
| Datasheet |  VS-GB100TP120N datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Modules |
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| Manufacturer | Vishay Semiconductor Diodes Division |
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| Series | - |
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| IGBT Type | - |
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| Configuration | Half Bridge |
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| Voltage - Collector Emitter Breakdown (Max) | 1200V |
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| Current - Collector (Ic) (Max) | 200A |
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| Power - Max | 650W |
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| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 100A |
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| Current - Collector Cutoff (Max) | 5mA |
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| Input Capacitance (Cies) @ Vce | 7.43nF @ 25V |
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| Input | Standard |
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| NTC Thermistor | No |
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| Mounting Type | Chassis Mount |
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| Package / Case | INT-A-Pak |
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| Supplier Device Package | INT-A-PAK |
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