Technical Specifications of 2N3636UB
| Datasheet |  2N3636UB datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Microsemi IRE Division |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | PNP |
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| Current - Collector (Ic) (Max) | 1A |
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| Voltage - Collector Emitter Breakdown (Max) | 175V |
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| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
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| Current - Collector Cutoff (Max) | 10μA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 10V |
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| Power - Max | 1.5W |
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| Frequency - Transition | - |
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| Mounting Type | Surface Mount |
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| Package / Case | 3-SMD, No Lead |
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| Supplier Device Package | 3-SMD |
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