Technical Specifications of 2N3636
| Datasheet |  2N3636 datasheet |
|---|
| Category | Discrete Semiconductor Products |
|---|
| Family | Transistors - Bipolar (BJT) - Single |
|---|
| Manufacturer | Microsemi IRE Division |
|---|
| Series | - |
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| Packaging | Bulk |
|---|
| Transistor Type | PNP |
|---|
| Current - Collector (Ic) (Max) | 1A |
|---|
| Voltage - Collector Emitter Breakdown (Max) | 175V |
|---|
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
|---|
| Current - Collector Cutoff (Max) | 10μA |
|---|
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 10V |
|---|
| Power - Max | 1W |
|---|
| Frequency - Transition | - |
|---|
| Mounting Type | Through Hole |
|---|
| Package / Case | TO-205AD, TO-39-3 Metal Can |
|---|
| Supplier Device Package | TO-39 |
|---|
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