Technical Specifications of 2N3637L
| Datasheet |  2N3637L datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Microsemi IRE Division |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | PNP |
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| Current - Collector (Ic) (Max) | 1A |
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| Voltage - Collector Emitter Breakdown (Max) | 175V |
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| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
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| Current - Collector Cutoff (Max) | 10μA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
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| Power - Max | 1W |
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| Frequency - Transition | - |
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| Mounting Type | Through Hole |
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| Package / Case | TO-205AA, TO-5-3 Metal Can |
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| Supplier Device Package | TO-5 |
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