Technical Specifications of JANTXV2N5794
| Datasheet |  JANTXV2N5794 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | Microsemi IRE Division |
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| Series | Military, MIL-PRF-19500/495 |
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| Packaging | Bulk |
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| Transistor Type | 2 NPN (Dual) |
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| Current - Collector (Ic) (Max) | 600mA |
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| Voltage - Collector Emitter Breakdown (Max) | 40V |
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| Vce Saturation (Max) @ Ib, Ic | 900mV @ 30mA, 300mA |
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| Current - Collector Cutoff (Max) | 10μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
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| Power - Max | 600mW |
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| Frequency - Transition | - |
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| Mounting Type | Through Hole |
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| Package / Case | TO-78-6 Metal Can |
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| Supplier Device Package | TO-78-6 |
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