Technical Specifications of IRF5805
| Datasheet |  IRF5805 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Infineon Technologies |
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| Series | HEXFET? |
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| Packaging | Tube |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Logic Level Gate |
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| Drain to Source Voltage (Vdss) | 30V |
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| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
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| Rds On (Max) @ Id, Vgs | 98 mOhm @ 3.8A, 10V |
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| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 17nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 511pF @ 25V |
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| Power - Max | 2W |
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| Operating Temperature | * |
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| Mounting Type | Surface Mount |
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| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
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| Supplier Device Package | Micro6?(TSOP-6) |
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