Technical Specifications of STD845DN40
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | STMicroelectronics |
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| Series | - |
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| Packaging | Tube |
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| Transistor Type | 2 NPN (Dual) |
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| Current - Collector (Ic) (Max) | 4A |
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| Voltage - Collector Emitter Breakdown (Max) | 400V |
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| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1A, 4A |
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| Current - Collector Cutoff (Max) | 250μA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 12 @ 2A, 5V |
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| Power - Max | 3W |
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| Frequency - Transition | - |
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| Mounting Type | Through Hole |
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| Package / Case | 8-DIP (0.300", 7.62mm) |
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| Supplier Device Package | 8-DIP |
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