Technical Specifications of SIDC11D60SIC3
| Category | Discrete Semiconductor Products |
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| Family | Diodes - Rectifiers - Single |
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| Manufacturer | Infineon Technologies |
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| Series | - |
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| Packaging | Bulk |
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| Diode Type | Silicon Carbide Schottky |
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| Voltage - DC Reverse (Vr) (Max) | 600V |
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| Current - Average Rectified (Io) | 4A (DC) |
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| Voltage - Forward (Vf) (Max) @ If | 1.9V @ 4A |
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| Speed | No Recovery Time > 500mA (Io) |
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| Reverse Recovery Time (trr) | 0ns |
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| Current - Reverse Leakage @ Vr | 200μA @ 600V |
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| Capacitance @ Vr, F | 150pF @ 1V, 1MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | Die |
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| Supplier Device Package | Sawn on foil |
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| Operating Temperature - Junction | -55°C ~ 175°C |
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