Technical Specifications of 2N5551,412
| Datasheet |  2N5551,412 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | NXP Semiconductors |
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| Series | - |
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| Packaging | Tube |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 300mA |
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| Voltage - Collector Emitter Breakdown (Max) | 160V |
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| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
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| Current - Collector Cutoff (Max) | 50nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
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| Power - Max | 630mW |
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| Frequency - Transition | 300MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
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| Supplier Device Package | TO-92-3 |
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