Technical Specifications of IRFBA90N20DPBF
| Datasheet |  IRFBA90N20DPBF datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Infineon Technologies |
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| Series | HEXFET? |
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| Packaging | Tube |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 200V |
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| Current - Continuous Drain (Id) @ 25°C | 98A (Tc) |
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| Rds On (Max) @ Id, Vgs | 23 mOhm @ 59A, 10V |
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| Vgs(th) (Max) @ Id | 5V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 240nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 6080pF @ 25V |
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| Power - Max | 650W |
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| Operating Temperature | -55°C ~ 175°C (TJ) |
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| Mounting Type | Through Hole |
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| Package / Case | Super-220?-3 (Straight Leads) |
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| Supplier Device Package | SUPER-220? (TO-273AA) |
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