Technical Specifications of NST847BDP6T5G
| Datasheet |  NST847BDP6T5G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | 2 NPN (Dual) |
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| Current - Collector (Ic) (Max) | 100mA |
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| Voltage - Collector Emitter Breakdown (Max) | 45V |
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| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
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| Current - Collector Cutoff (Max) | 15nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
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| Power - Max | 350mW |
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| Frequency - Transition | 100MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | SOT-963 |
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| Supplier Device Package | SOT-963 |
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