Technical Specifications of TPS1100DG4
| Datasheet |  TPS1100DG4 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Texas Instruments |
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| Series | - |
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| Packaging | Tube |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 15V |
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| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
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| Rds On (Max) @ Id, Vgs | 180 mOhm @ 1.5A, 10V |
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| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 5.45nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | - |
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| Power - Max | 791mW |
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| Operating Temperature | -40°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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| Supplier Device Package | 8-SOIC |
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