Technical Specifications of 2N5582
| Datasheet |  2N5582 datasheet |
|---|
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Microsemi Corporation |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 800mA |
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| Voltage - Collector Emitter Breakdown (Max) | 50V |
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| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
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| Current - Collector Cutoff (Max) | 10μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
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| Power - Max | 500mW |
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| Frequency - Transition | - |
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| Mounting Type | Through Hole |
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| Package / Case | TO-206AB, TO-46-3 Metal Can |
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| Supplier Device Package | TO-46-3 |
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