Technical Specifications of ULN2803AFWG,C,EL
| Datasheet |  ULN2803AFWG,C,EL datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | 8 NPN Darlington |
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| Current - Collector (Ic) (Max) | 500mA |
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| Voltage - Collector Emitter Breakdown (Max) | 50V |
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| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500μA, 350mA |
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| Current - Collector Cutoff (Max) | - |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
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| Power - Max | 1.31W |
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| Frequency - Transition | - |
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| Mounting Type | Surface Mount |
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| Package / Case | 18-SOIC (0.295", 7.50mm Width) |
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| Supplier Device Package | 18-SOL |
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