Technical Specifications of 2N3583
| Datasheet |  2N3583 datasheet |
|---|
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Central Semiconductor Corp |
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| Series | - |
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| Packaging | Tube |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 1A |
|---|
| Voltage - Collector Emitter Breakdown (Max) | 175V |
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| Vce Saturation (Max) @ Ib, Ic | 5V @ 125mA, 1A |
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| Current - Collector Cutoff (Max) | 10mA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 10V |
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| Power - Max | 35W |
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| Frequency - Transition | 10MHz |
|---|
| Mounting Type | Through Hole |
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| Package / Case | TO-213AA, TO-66-2 |
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| Supplier Device Package | TO-66 |
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