Technical Specifications of BSZ086P03NS3E G
| Datasheet |  BSZ086P03NS3E G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Infineon Technologies |
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| Series | OptiMOS? |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 30V |
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| Current - Continuous Drain (Id) @ 25°C | 13.5A (Ta), 40A (Tc) |
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| Rds On (Max) @ Id, Vgs | 8.6 mOhm @ 20A, 10V |
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| Vgs(th) (Max) @ Id | 3.1V @ 105μA |
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| Gate Charge (Qg) @ Vgs | 57.5nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 4785pF @ 15V |
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| Power - Max | 69W |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-PowerTDFN |
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| Supplier Device Package | PG-TSDSON-8 (3.3x3.3) |
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