Technical Specifications of NSVEMT1DXV6T1G
| Datasheet |  NSVEMT1DXV6T1G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | 2 PNP (Dual) |
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| Current - Collector (Ic) (Max) | 100mA |
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| Voltage - Collector Emitter Breakdown (Max) | 60V |
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| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
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| Current - Collector Cutoff (Max) | 500pA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
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| Power - Max | 500mW |
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| Frequency - Transition | 140MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | SOT-563, SOT-666 |
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| Supplier Device Package | SOT-563 |
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