Navigation
Home
About us
Products
Manufacturers
RFQ
Service
FAQ
Contact us
ICRFQ.com - Electronic Components Distributor in China Since 2003
We make your sourcing easier!
Get A Fast Quote Worldwide!
[email protected]
Home > Products > Discrete Semiconductor > Transistors - Bipolar (BJT) - Single, Pre-Biased > BCR108WE6327BTSA1

BCR108WE6327BTSA1

Manufacturer Part Number BCR108WE6327BTSA1
Manufacturer Infineon Technologies
Description TRANS PREBIAS NPN 250MW SOT323-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
BCR108WE6327BTSA1 Price

Technical Specifications of BCR108WE6327BTSA1

Datasheet BCR108WE6327BTSA1 datasheet
CategoryDiscrete Semiconductor Products
FamilyTransistors - Bipolar (BJT) - Single, Pre-Biased
ManufacturerInfineon Technologies
Series-
PackagingTape & Reel (TR)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)2.2k
Resistor - Emitter Base (R2) (Ohms)47k
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500μA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition170MHz
Power - Max250mW
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackagePG-SOT323-3
<   Previous Product Next Product   >
Home > Products

Electronic Components and Parts

BCR108WE6327BTSA1

Manufacturer Part Number BCR108WE6327BTSA1
Manufacturer Infineon Technologies
Description TRANS PREBIAS NPN 250MW SOT323-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
BCR108WE6327BTSA1 Price

Technical Specifications of BCR108WE6327BTSA1

Datasheet BCR108WE6327BTSA1 datasheet
CategoryDiscrete Semiconductor Products
FamilyTransistors - Bipolar (BJT) - Single, Pre-Biased
ManufacturerInfineon Technologies
Series-
PackagingTape & Reel (TR)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)2.2k
Resistor - Emitter Base (R2) (Ohms)47k
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500μA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition170MHz
Power - Max250mW
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackagePG-SOT323-3
We can supply Infineon Technologies part# BCR108WE6327BTSA1. Use the request quote form to request BCR108WE6327BTSA1 pirce and lead time. RANTLE EAST ELECTRONIC - ICRFQ.com is an independent stocking distributor of electronic components. With 5+ Million line items of available electronic components can ship in short lead-time, over 300 thousand part numbers of electronic components in stock for immediately delivery, which may include part number BCR108WE6327BTSA1. The price and lead time for BCR108WE6327BTSA1 depending on the quantity required, availability and warehouse location. Contact us today and our sales representative will provide you price and delivery on Part# BCR108WE6327BTSA1. We look forward to doing business with you.

Related parts for BCR108WE6327BTSA1

SIT9003AI-13-33DO-66.66667T
SIT9003AI-13-33DO-66.66667T
SiTIME
OSC XO 66.66667MHZ SD -0.50%

CE3292-19.440
CE3292-19.440
Crystek Corporation
19.44MHz HCMOS, TTL XO (Standard) Oscillator Surface Mount 5V 60mA Enable/Disable

SIT1602BC-12-33E-48.00000E
SIT1602BC-12-33E-48.00000E
SiTIME
OSC XO 3.3V 48MHZ OE

445W35L27M00000
445W35L27M00000
CTS-Frequency Controls
27MHz ±30ppm Crystal 12pF 40 Ohm 0°C ~ 50°C Surface Mount 2-SMD

TD-36.000MBE-T
TD-36.000MBE-T
TXC CORPORATION
36MHz CMOS MEMS (Silicon) Oscillator Surface Mount 3.3V 25mA Enable/Disable

IRG4BC20SPBF
IRG4BC20SPBF
Infineon Technologies
IGBT 600V 19A 60W TO220AB

NE97833-T1B-A
NE97833-T1B-A
CEL
RF TRANSISTOR PNP SOT-23

BTA06-400ARG
BTA06-400ARG
STMicroelectronics
TRIAC SENS GATE 400V 6A TO220AB

FDBL0240N100
FDBL0240N100
Fairchild Semiconductor
MOSFET N-CH 100V 210A POWER56

IRL3103D2S
IRL3103D2S
Infineon Technologies
MOSFET N-CH 30V 54A D2PAK

1N5240B (DO-35)
1N5240B (DO-35)
Microsemi Corporation
DIODE ZENER 10V 500MW DO35

BZX284-B20,115
BZX284-B20,115
NXP Semiconductors
DIODE ZENER 20V 400MW SOD2

DMG8880LK3-13
DMG8880LK3-13
Diodes Incorporated
MOSFET N-CH 30V 11A TO252-3L

STB20NM60D
STB20NM60D
STMicroelectronics
MOSFET N-CH 600V 20A D2PAK

IRGP4630DPBF
IRGP4630DPBF
Infineon Technologies
IGBT 600V 47A 206W TO247AC

IXTP160N10T
IXTP160N10T
IXYS
MOSFET N-CH 100V 160A TO-220

BAS40-06-HE3-18
BAS40-06-HE3-18
Vishay Semiconductor Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23

IXGH39N60BD1
IXGH39N60BD1
IXYS
IGBT 600V 76A 200W TO247AD

SI7946DP-T1-GE3
SI7946DP-T1-GE3
Vishay Siliconix
MOSFET 2N-CH 150V 2.1A PPAK SO-8

IRG4PC40U
IRG4PC40U
Infineon Technologies
IGBT 600V 40A 160W TO247AC

<   Previous Product Next Product   >

Related keywords for BCR108WE6327BTSA1