Technical Specifications of TTA0002(Q)
| Datasheet |  TTA0002(Q) datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | PNP |
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| Current - Collector (Ic) (Max) | 18A |
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| Voltage - Collector Emitter Breakdown (Max) | 160V |
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| Vce Saturation (Max) @ Ib, Ic | 2V @ 900mA, 9A |
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| Current - Collector Cutoff (Max) | 1μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 5V |
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| Power - Max | 180W |
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| Frequency - Transition | 30MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-3PL |
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| Supplier Device Package | TO-3P(L) |
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