Technical Specifications of APL1001J
Datasheet | APL1001J datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Microsemi Corporation |
Series | - |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 18A |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 2.5mA |
Gate Charge (Qg) @ Vgs | - |
Input Capacitance (Ciss) @ Vds | 7200pF @ 25V |
Power - Max | 520W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SOT-227-4, miniBLOC |
Supplier Device Package | ISOTOP? |
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