Technical Specifications of CSD25202W15T
| Datasheet |  CSD25202W15T datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Texas Instruments |
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| Series | NexFET? |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 20V |
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| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
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| Rds On (Max) @ Id, Vgs | 26 mOhm @ 2A, 4.5V |
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| Vgs(th) (Max) @ Id | 1.05V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 7.5nC @ 4.5V |
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| Input Capacitance (Ciss) @ Vds | 1010pF @ 10V |
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| Power - Max | 500mW |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 9-UFBGA, DSBGA |
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| Supplier Device Package | 9-DSBGA |
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