Technical Specifications of PBSS5350S,126
| Datasheet |  PBSS5350S,126 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | NXP Semiconductors |
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| Series | - |
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| Packaging | Tape & Box (TB) |
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| Transistor Type | PNP |
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| Current - Collector (Ic) (Max) | 3A |
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| Voltage - Collector Emitter Breakdown (Max) | 50V |
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| Vce Saturation (Max) @ Ib, Ic | 300mV @ 200mA, 2A |
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| Current - Collector Cutoff (Max) | 100nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 2V |
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| Power - Max | 830mW |
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| Frequency - Transition | 100MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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| Supplier Device Package | TO-92-3 |
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