Technical Specifications of 2SC3858
| Datasheet |  2SC3858 datasheet |
|---|
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Sanken |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 17A |
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| Voltage - Collector Emitter Breakdown (Max) | 200V |
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| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 1A, 10A |
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| Current - Collector Cutoff (Max) | 100μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 8A, 4V |
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| Power - Max | 200W |
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| Frequency - Transition | 20MHz |
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| Mounting Type | Through Hole |
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| Package / Case | 3-ESIP |
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| Supplier Device Package | MT-200 |
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