Technical Specifications of 2SD2562
| Datasheet |  2SD2562 datasheet |
|---|
| Category | Discrete Semiconductor Products |
|---|
| Family | Transistors - Bipolar (BJT) - Single |
|---|
| Manufacturer | Sanken |
|---|
| Series | - |
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| Packaging | Bulk |
|---|
| Transistor Type | NPN - Darlington |
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| Current - Collector (Ic) (Max) | 15A |
|---|
| Voltage - Collector Emitter Breakdown (Max) | 150V |
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| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 10mA, 10A |
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| Current - Collector Cutoff (Max) | 100μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 5000 @ 10A, 4V |
|---|
| Power - Max | 85W |
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| Frequency - Transition | 70MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-3P-3 Full Pack |
|---|
| Supplier Device Package | TO-3PF |
|---|
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