Technical Specifications of APT70GR65B2SCD30
| Datasheet |  APT70GR65B2SCD30 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | Microsemi Corporation |
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| Series | * |
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| Packaging | Bulk |
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| IGBT Type | NPT |
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| Voltage - Collector Emitter Breakdown (Max) | 650V |
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| Current - Collector (Ic) (Max) | 134A |
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| Current - Collector Pulsed (Icm) | 260A |
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| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 70A |
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| Power - Max | 595W |
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| Switching Energy | * |
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| Input Type | * |
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| Gate Charge | 305nC |
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| Td (on/off) @ 25°C | 19ns/170ns |
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| Test Condition | 433V, 70A, 4.3 Ohm, 15V |
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| Reverse Recovery Time (trr) | - |
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| Package / Case | TO-247-3 |
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| Mounting Type | Through Hole |
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| Supplier Device Package | T-MAX? [B2] |
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