Technical Specifications of RJH1CV7DPQ-E0#T2
| Datasheet |  RJH1CV7DPQ-E0#T2 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | Renesas Electronics America |
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| Series | - |
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| Packaging | Tube |
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| IGBT Type | Trench |
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| Voltage - Collector Emitter Breakdown (Max) | 1200V |
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| Current - Collector (Ic) (Max) | 70A |
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| Current - Collector Pulsed (Icm) | - |
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| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 35A |
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| Power - Max | 320W |
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| Switching Energy | 3.2mJ (on), 2.5mJ (off) |
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| Input Type | Standard |
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| Gate Charge | 166nC |
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| Td (on/off) @ 25°C | 53ns/185ns |
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| Test Condition | 600V, 35A, 5 Ohm, 15V |
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| Reverse Recovery Time (trr) | 200ns |
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| Package / Case | TO-247-3 |
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| Mounting Type | Through Hole |
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| Supplier Device Package | TO-247 |
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