Technical Specifications of 2SD1060R-1E
| Datasheet |  2SD1060R-1E datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Tube |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 5A |
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| Voltage - Collector Emitter Breakdown (Max) | 50V |
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| Vce Saturation (Max) @ Ib, Ic | 300mV @ 300mA, 3A |
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| Current - Collector Cutoff (Max) | 100μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 2V |
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| Power - Max | 1.75W |
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| Frequency - Transition | 30MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-220-3 |
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| Supplier Device Package | TO-220-3 |
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