Technical Specifications of APTC60DAM35T1G
| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Microsemi Corporation |
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| Series | - |
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| Packaging | Bulk |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Logic Level Gate |
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| Drain to Source Voltage (Vdss) | 600V |
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| Current - Continuous Drain (Id) @ 25°C | 72A |
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| Rds On (Max) @ Id, Vgs | 35 mOhm @ 72A, 10V |
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| Vgs(th) (Max) @ Id | 3.9V @ 5.4mA |
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| Gate Charge (Qg) @ Vgs | 518nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 14000pF @ 25V |
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| Power - Max | 416W |
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| Operating Temperature | -40°C ~ 150°C (TJ) |
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| Mounting Type | Chassis Mount |
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| Package / Case | SP1 |
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| Supplier Device Package | SP1 |
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