Technical Specifications of VQ1001P-E3
| Datasheet |  VQ1001P-E3 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Arrays |
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| Manufacturer | Vishay Siliconix |
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| Series | - |
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| Packaging | * |
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| FET Type | 4 N-Channel |
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| FET Feature | Logic Level Gate |
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| Drain to Source Voltage (Vdss) | 30V |
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| Current - Continuous Drain (Id) @ 25°C | 830mA |
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| Rds On (Max) @ Id, Vgs | 1.75 Ohm @ 200mA, 5V |
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| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
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| Gate Charge (Qg) @ Vgs | - |
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| Input Capacitance (Ciss) @ Vds | 110pF @ 15V |
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| Power - Max | 2W |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | * |
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| Package / Case | - |
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| Supplier Device Package | * |
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