Technical Specifications of IXXH80N65B4H1
| Datasheet |  IXXH80N65B4H1 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | IXYS |
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| Series | GenX4?, XPT? |
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| Packaging | Tube |
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| Part Status | Active |
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| IGBT Type | PT |
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| Voltage - Collector Emitter Breakdown (Max) | 650V |
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| Current - Collector (Ic) (Max) | 160A |
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| Current - Collector Pulsed (Icm) | 430A |
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| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 80A |
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| Power - Max | 625W |
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| Switching Energy | 3.77mJ (on), 1.2mJ (off) |
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| Input Type | Standard |
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| Gate Charge | 120nC |
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| Td (on/off) @ 25°C | 38ns/120ns |
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| Test Condition | 400V, 80A, 3 Ohm, 15V |
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| Reverse Recovery Time (trr) | 150ns |
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| Package / Case | TO-247-3 |
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| Mounting Type | Through Hole |
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| Supplier Device Package | TO-247 (IXXH) |
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