Technical Specifications of 2N3810
| Datasheet |  2N3810 datasheet |
|---|
| Category | Discrete Semiconductor Products |
|---|
| Family | Transistors - Bipolar (BJT) - Arrays |
|---|
| Manufacturer | Microsemi Corporation |
|---|
| Series | - |
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| Packaging | Bulk |
|---|
| Transistor Type | 2 PNP (Dual) |
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| Current - Collector (Ic) (Max) | 50mA |
|---|
| Voltage - Collector Emitter Breakdown (Max) | 60V |
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| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100μA, 1mA |
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| Current - Collector Cutoff (Max) | 10μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V |
|---|
| Power - Max | 350mW |
|---|
| Frequency - Transition | - |
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| Mounting Type | Through Hole |
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| Package / Case | TO-78-6 Metal Can |
|---|
| Supplier Device Package | TO-78-6 |
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