Technical Specifications of IXGQ35N120BD1
| Datasheet |  IXGQ35N120BD1 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | IXYS |
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| Series | - |
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| Packaging | Tube |
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| IGBT Type | - |
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| Voltage - Collector Emitter Breakdown (Max) | 1200V |
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| Current - Collector (Ic) (Max) | 75A |
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| Current - Collector Pulsed (Icm) | 200A |
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| Vce(on) (Max) @ Vge, Ic | 3.3V @ 15V, 35A |
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| Power - Max | 400W |
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| Switching Energy | 900μJ (on), 3.8mJ (off) |
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| Input Type | Standard |
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| Gate Charge | 140nC |
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| Td (on/off) @ 25°C | 40ns/270ns |
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| Test Condition | 960V, 35A, 3 Ohm, 15V |
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| Reverse Recovery Time (trr) | 40ns |
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| Package / Case | TO-3P-3, SC-65-3 |
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| Mounting Type | Through Hole |
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| Supplier Device Package | TO-3P |
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