Technical Specifications of 1N5809US
| Datasheet |  1N5809US datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Diodes - Rectifiers - Single |
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| Manufacturer | Microsemi Corporation |
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| Series | - |
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| Packaging | Bulk |
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| Diode Type | Standard |
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| Voltage - DC Reverse (Vr) (Max) | 100V |
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| Current - Average Rectified (Io) | 3A |
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| Voltage - Forward (Vf) (Max) @ If | 875mV @ 4A |
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| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
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| Reverse Recovery Time (trr) | 30ns |
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| Current - Reverse Leakage @ Vr | 5μA @ 100V |
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| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | SQ-MELF, B |
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| Supplier Device Package | B, SQ-MELF |
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| Operating Temperature - Junction | -65°C ~ 175°C |
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