Technical Specifications of NSV20101JT1G
| Datasheet |  NSV20101JT1G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 1A |
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| Voltage - Collector Emitter Breakdown (Max) | 20V |
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| Vce Saturation (Max) @ Ib, Ic | 220mV @ 100mA, 1A |
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| Current - Collector Cutoff (Max) | 100nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
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| Power - Max | 255mW |
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| Frequency - Transition | 350MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | SC-89, SOT-490 |
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| Supplier Device Package | SC-89-3 |
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