Technical Specifications of JAN2N3810
| Datasheet |  JAN2N3810 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | Microsemi IRE Division |
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| Series | Military, MIL-PRF-19500/336 |
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| Packaging | Bulk |
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| Transistor Type | 2 PNP (Dual) |
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| Current - Collector (Ic) (Max) | 50mA |
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| Voltage - Collector Emitter Breakdown (Max) | 60V |
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| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100μA, 1mA |
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| Current - Collector Cutoff (Max) | 10μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V |
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| Power - Max | 350mW |
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| Frequency - Transition | - |
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| Mounting Type | Through Hole |
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| Package / Case | TO-78-6 Metal Can |
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| Supplier Device Package | TO-78-6 |
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