Technical Specifications of IXBT10N170
| Datasheet |  IXBT10N170 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | IXYS |
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| Series | BIMOSFET? |
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| Packaging | Tube |
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| IGBT Type | - |
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| Voltage - Collector Emitter Breakdown (Max) | 1700V |
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| Current - Collector (Ic) (Max) | 20A |
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| Current - Collector Pulsed (Icm) | 40A |
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| Vce(on) (Max) @ Vge, Ic | 3.8V @ 15V, 10A |
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| Power - Max | 140W |
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| Switching Energy | 6mJ (off) |
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| Input Type | Standard |
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| Gate Charge | 30nC |
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| Td (on/off) @ 25°C | 35ns/500ns |
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| Test Condition | 1360V, 10A, 56 Ohm, 15V |
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| Reverse Recovery Time (trr) | 360ns |
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| Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
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| Mounting Type | Surface Mount |
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| Supplier Device Package | TO-268 |
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